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| STZT2222 STZT2222A MEDIUM POWER AMPLIFIER ADVANCE DATA s s s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE PNP COMPLEMENTS ARE STZT2907 AND STZT2907A RESPECTIVELY 2 1 SOT-223 2 3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC P tot T stg Tj Parameter STZT2222 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T c = 25 C Storage Temperature Max. Operating Junction Temperature o Value STZT2222A 75 40 6 0.8 1.5 -65 to 150 150 60 30 5 Unit V V V A W o o C C 1/5 October 1995 STZT2222/STZT2222A THERMAL DATA R thj-amb * R thj-tab * Thermal Resistance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 83.3 10 o o C/W C/W * Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEX IBEX I EBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (V BE = -3V) Base Cut-off Current (V BE = -3V) Emitter Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (IE = 0) Test Conditions V CB = rated V CBO V CB = rated V CBO V CE = 60 V V CE = 60 V T amb = 125 C o Min. Typ. Max. 10 10 10 20 Unit nA A nA nA for STZT2222A for STZT2222A V EB = 3 V for STZT2222 for STZT2222A I C = 10 A for STZT2222 for STZT2222A I C = 10 mA for STZT2222 for STZT2222A I E = 10 A for STZT2222 for STZT2222 I C = 150 mA I B = 15 mA for STZT2222 for STZT2222A I C = 500 mA I B = 50 mA for STZT2222 for STZT2222A I C = 150 mA I B = 15 mA for STZT2222 for STZT2222A I C = 500 mA I B = 50 mA for STZT2222 for STZT2222A I C = 0.1 mA V CE = 10 V I C = 1 mA V CE = 10 V I C = 10 mA V CE = 10 V I C = 150 mA V CE = 10 V I C = 150 mA V CE = 1 V I C = 500 mA V CE = 10 V for STZT2222 for STZT2222A I C = 10 mA V CE = 10 V T c = -55 o C for STZT2222 35 50 75 100 50 30 40 35 60 75 30 40 5 6 30 15 nA nA V V V V V V V (BR)CBO V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage V CE(sat) 0.4 0.3 1.6 1 1.3 1.2 2.6 2 V V V V V V V V V BE(sat) Base-Emitter Saturation Voltage 0.6 h FE DC Current Gain 300 2/5 STZT2222/STZT2222A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol h fe hie h re h oe fT Parameter Small Signal Current Gain Input Impedance Reverse Voltage Ratio Output Impedance Transition Frequency Test Conditions I C = 1 mA I C = 10 mA I C = 1 mA I C = 10 mA I C = 1 mA I C = 10 mA I C = 1 mA I C = 10 mA V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V f = 1 KHz f = 1 KHz f = 1 KHz f = 1 KHz f = 1 KHz f = 1 KHz f = 1 KHz f = 1 KHz 5 25 250 300 8 Min. 50 75 2 0.25 Typ. Max. 300 375 8 1.25 8 4 35 375 10 -4 S Unit K I C = 10 mA V CE = 10 V f = 100 MHz for STZT2222 for STZT2222A IE = 0 V CB = 10 V f = 1 MHz f = 1 MHz MHz MHz pF C CBO C EBO Collector-Base Capacitance Emitter-Base Capacitance Noise Figure Delay Time Rise Time Storage Time Fall Time IC = 0 V EB = 0.5 V for STZT2222 for STZT2222A 30 25 4 10 25 pF pF dB ns ns ns ns NF td tr ts tf f = 1 KHz F = 200 Hz R G = 1K I C = 0.1 mA V CE = 10 V I C = 150 mA V BE = -0.5 V I C = 150 mA I B2 = 15 mA I C1 = 15 mA I C1 = 15 mA 225 60 Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Only for STZT2222A 3/5 STZT2222/STZT2222A SOT223 MECHANICAL DATA mm MIN. a b c d e1 e4 f g l1 l2 L 2.9 0.67 6.7 3.5 6.3 3 0.7 7 3.5 6.5 2.27 4.57 0.2 0.63 1.5 TYP. 2.3 4.6 0.4 0.65 1.6 MAX. 2.33 4.63 0.6 0.67 1.7 0.32 3.1 0.73 7.3 3.7 6.7 114.2 26.4 263.8 137.8 248 118.1 27.6 275.6 137.8 255.9 MIN. 89.4 179.9 7.9 24.8 59.1 mils TYP. 90.6 181.1 15.7 25.6 63 MAX. 91.7 182.3 23.6 26.4 66.9 12.6 122.1 28.7 287.4 145.7 263.8 DIM. L l2 e1 a b f d c e4 C l1 B C E g P008B 4/5 STZT2222/STZT2222A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 5/5 |
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